By Zhiqiang Li

ISBN-10: 366249681X

ISBN-13: 9783662496817

This publication quite often specializes in decreasing the excessive parasitic resistance within the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) approach, P and Sb co-implantation approach and a number of Implantation and a number of Annealing (MIMA) strategy, the electron Schottky barrier top of NiGe/Ge touch is modulated to 0.1eV, the thermal balance of NiGe is enhanced to six hundred℃ and the touch resistivity of metal/n-Ge touch is tremendously decreased to 3.8×10−7Ω•cm2, respectively. along with, a discounted  source/drain parasitic resistance is verified within the  fabricated Ge nMOSFET. Readers will locate worthy information regarding the source/drain engineering process for high-performance CMOS units at destiny know-how node.

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) by Zhiqiang Li

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